MRF6VP2600H

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RF Power Field Effect Transistor

N- Channel Enhancement - Mode Lateral MOSFET

Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.

 

  • Typical DVBT OFDMPerformance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Watts Avg., f = 225 MHz, Channel Bandwidth = 7.61 MHz, Input Signal PAR = 9.3 dB @ 0.01%; Probability on CCDF.

    Power Gain : 25 dB;

    Drain Efficiency: 28.5%

   ACPR @ 4 MHz Offset : -61 dBc @ 4 kHz Bandwidth

 

  • Typical Pulsed Performance: VDD = 50 Volts, IDQ = 2600 mA,Pout = 600 Watts Peak, f = 225 MHz, Pulse Width = 100 μsec, Duty Cycle = 20%

    Power Gain : 25.3 dB

    Drain Efficiency : 59%

 

  • Capable of Handling 10:1 VSWR, @ 50 Vdc, 225 MHz, 600 Watts Peak Power, Pulse Width = 100 μsec, Duty Cycle = 20%

 

Features

  •  Integrated ESD Protection
  •  Excellent Thermal Stability
  •  Designed for Push-Pull Operation
  •  Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  •  RoHS Compliant
  •  In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.