PHILIPS BLF278 50V VHF Mosfet Transistor 300W
FEATURES:
High power gainEasy power control
Good thermal stability
Gold metallization ensures excellent reliability.
APPLICATIONS:
Broadcast transmitters in the VHF frequency range.
DESCRIPTION:
Dual push-pull silicon N-channel enhancement mod evertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramiccaps. The mounting flange provides the common source connection for the transistors.
QUICK REFERENCE DATA:
RF performance at Th=25C in a push-pull common source test circuit.
MODE OF OPERATION | f(MHz) | VDS(V) | PL(W) | Gp(dB) | D(%) |
CW, class-B | 108 | 50 | 300 | >20 | >60 |
CW, class-C | 108 | 50 | 300 | typ. 18 | typ. 80 |
CW, class-AB | 225 | 50 | 250 | >14 typ. 16 | >50 typ. 55 |
LIMITING VALUES:
In accordance with the Absolute Maximum System (IEC60134). Per transistor section
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDS | drain-source voltage | | - | 125 | V |
VGS | gate-source voltage | | - | ±20 | V |
ID | drain current (DC) | | - | 18 | A |
Ptot | total power dissipation | Tmb≤25C; total device; bothsections equally loaded | - | 500 | W |
Tstg | storage temperature | | | 150 | oC |
Tj | junction temperature | | | -200 | oC |
